content by LCUS
Semiconductor Seed Matrix (7T Seed / AutoPhi Future): From Ratio to GDSII to Blu-ray
2 min read
1 parts, 5 paragraphs
One Seed, Any Size Chip, Scalable FLOPS
The fifteenth embodiment in U.S. patent application 19/540,453 is the semiconductor seed matrix system—also referred to as 7T seed or AutoPhi Future. It provides a method and apparatus for building semiconductor designs from a ratio of instruction set (derived from size) to calculation and performance per exchange. Inputs include scenario identifier, node (nm), height and width (mm), area per voxel, FLOPS per voxel, power, and cost (e.g., AES). Outputs include area S = H×W, voxel count N_v = S/a_v, total calculation C = N_v×f_v, density, performance per dollar, and performance per watt.
The seed is a minimal canonical specification. From it are grown foundry packages (e.g., TSMC, Samsung, Intel, SkyWater, GlobalFoundries), 14 nm and 7 nm builds, and 25 GB Blu-ray harvests. The seed has a declarative part and an executable part (e.g., one or more voxels through OpenLANE2 to GDSII and LEF). Voxel types include INTERCONNECT, LIGHT, BLANK, HYBRID, QUANTUM, IO, MEMORY, CROSS. Reproducibility: same seed, same inputs, same result. Versioning of the seed versions the chips. The system supports any size chip, any kind of processing (classical, hybrid, photonic, quantum), and scalable FLOPS (e.g., to zettaflop scale) as a service.
Why “Seed Matrix”
Instead of designing each chip from scratch, the system starts from a compact seed and expands it by formula. That allows many chips to be derived from one specification while keeping traceability and reproducibility. Claim 7 explicitly ties the portfolio to formulas S = H×W, N_v = S/a_v, C = N_v×f_v and to GDSII, LEF, and 25 GB Blu-ray harvest. Claim 10 states that the method supports any chip size and any of classical, hybrid, photonic, and quantum processing with scalable FLOPS.
Figure 15: flowchart—input, matrix, output, harvest. Application # 19/540,453, filed February 13, 2026. Confirmation # 1134, Patent Center # 74480330.
Source: US Patent Application 19/540,453, Section 8.15, Claims 1, 7, 9, 10, and Abstract.
Copy one of the formats below: